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Third-Generation Semiconductor: Silicon Carbide (SiC)
N-Type Conductive SiC Ingot
N-Type Conductive SiC Substrate
Semi-insulating SiC Substrates
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Taisicmaterials Corp.
News
22
2026/09
TAISIC Materials Cordially Invites You to ICSCRM 2026 — Exploring the Future of SiC Materials Together
TAISIC Materials Corp. is pleased to announce i...
02
2026/09
TAISIC Materials Unveils Taiwan’s First 12-Inch SiC Crystal Boule, with First-Half Revenue Surpassing Last Year’s Full-Year Total
TAISIC Materials Unveils Taiwan’s First 1...
28
2026/08
TAISIC Materials to Participate in International Semiconductor Exhibition, Showcasing SiC Development Achievements
TAISIC Materials to Participate in SEMICON Taiw...
22
2026/05
TAISIC Materials, a Kenmec Subsidiary Backed by Foxconn, Plans to Raise NT$700 Million Through a Capital Increase
In 2026, Kenmec Mechanical Engineering (6125-TW...
24
2026/01
Kenmec and Tainergy Year-End Banquet: TAISIC Materials Expects Revenue to Double This Year as SiC Shipments Ramp Up
TAISIC Materials Expects Revenue to Multiply in...
09
2025/01
News-Taisic Materials navigates SiC oversupply by focusing on larger eight-inch wafers, eyeing growth in US and Japan
Taisic Materials navigates SiC oversupply by fo...
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Product
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8" N-Type (Conductive) SiC Substrate
Resistivity: Low resistivity: 13–30 mΩ·cm Size...
Semi-Insulating SiC Substrates | 4" / 6" / 8"
Resistivity: High resistivity > 1 × 10⁶ Ω·cm S...
8" N-Type Conductive SiC Ingot
Resistivity: Low resistivity: 13–30 mΩ·cm Size...
6" N-Type Conductive SiC Ingot
Resistivity: Low resistivity: 13–30 mΩ·cm Size...
6" N-Type Conductive SiC Substrate
Resistivity: Low resistivity: 13–30 mΩ·cm Size...