Third-Generation Semiconductor: Silicon Carbide (SiC)

      N-Type Conductive SiC Ingot

      • 8" N-Type Conductive SiC Ingot

        Resistivity: Low resistivity: 13–30 mΩ·cm
        Size: 8 inches
        Thickness: Wafer: 350 & 500 μm / Ingot: 10–20 mm

        Features:
        Enables smaller device form factors, ultra-high operating voltages and switching frequencies, and enhanced device stability at high temperatures.

        Applications:
        Electric vehicles (EVs), power supplies, railway transportation, solar inverters, and AI data centers.

        Specification Request: sales.taisicmaterials.com

      • 6" N-Type Conductive SiC Ingot

        Resistivity: Low resistivity: 13–30 mΩ·cm
        Size: 8 inches
        Thickness: Ingot: 10–20 mm
        Grade: P-MOSFET / P-SBD / Dummy

        Features:
        Enables smaller device form factors, ultra-high operating voltages and switching frequencies, and enhanced device stability at high temperatures.

        Applications:
        Electric vehicles (EVs), power supplies, railway transportation, solar inverters, and AI data centers.

        For Specifications: sales.taisicmaterials.com