TAISIC Materials to Participate in International Semiconductor Exhibition, Showcasing SiC Development Achievements
TAISIC Materials to Participate in SEMICON Taiwan 2026, Showcasing SiC Development Achievements
SEMICON Taiwan 2026 is set to open on September 2. TAISIC Materials, a subsidiary of Kenmec Group, announced today that it will showcase its latest silicon carbide (SiC) development achievements, including 12-inch SiC crystal boules and P-type SiC substrates.
In a press release issued today, Ming-Kai Hsieh, Chairman of Kenmec Group and TAISIC Materials, stated that high-end SiC substrates have historically relied heavily on supplies from major international manufacturers.
By utilizing equipment independently developed by its parent company, Kenmec Mechanical Engineering, TAISIC Materials has successfully achieved a breakthrough in the development of 12-inch SiC crystal boules and overcome key technical barriers in P-type SiC substrate crystal growth.
Hsieh emphasized that these achievements represent a major milestone for Taiwan's wide-bandgap (WBG) semiconductor industry, advancing the localization of manufacturing equipment and the development of an independent materials supply chain.
TAISIC Materials plans to collaborate with global customers to capture emerging business opportunities in artificial intelligence (AI) and high-voltage green energy applications.
The company further noted that its P-type SiC substrates will primarily target the ultra-high-voltage power device market, particularly SiC insulated-gate bipolar transistors (IGBTs) rated at 6.5 kV to 10 kV and above, which are essential for applications such as smart grids and rail transportation.
Source: Central News Agency (CNA), Taiwan
Original Article: https://chatgpt.com/c/6ab0b0d5-96dc-83ee-ab86-a58bc5f5293c