TAISIC Materials Unveils Taiwan’s First 12-Inch SiC Crystal Boule, with First-Half Revenue Surpassing Last Year’s Full-Year Total
TAISIC Materials Unveils Taiwan’s First 12-Inch SiC Crystal Boule, with First-Half Revenue Surpassing Last Year’s Full-Year Total
Ming-Hsun Hsieh, General Manager of TAISIC Materials (6930), a subsidiary of Kenmec Group (6125), stated that the company has successfully developed a prototype 12-inch silicon carbide (SiC) crystal boule and achieved mass production of 6-inch and 8-inch conductive and semi-insulating SiC ingots and substrates.
The company also showcased its P-type SiC wafers and highly customized square SiC substrates for the first time. Revenue in the first half of this year has already exceeded the full-year total for last year, and the company expects to be listed on Taiwan's Emerging Stock Market by the end of the year.
Ming-Kai Hsieh, Chairman of Kenmec Group and TAISIC Materials, emphasized that mastery of advanced materials is a key factor in determining Taiwan's competitiveness in the global end-product market.
In the past, high-end SiC substrates relied heavily on major international suppliers. Today, TAISIC Materials has not only successfully pushed the boundaries of 12-inch SiC crystal growth using equipment developed in-house by Kenmec Group, but has also overcome key technical barriers in P-type SiC substrate crystal growth.
These achievements represent a significant step toward the localization of manufacturing equipment and the establishment of an independent materials supply chain.
Ming-Hsun Hsieh further explained that TAISIC Materials has another two years remaining under its government-supported technology development program, which officially commenced in May this year.
The company is collaborating with major semiconductor manufacturers to develop single-crystal wafer materials for various advanced packaging structures.
At this stage, TAISIC Materials aims to establish capabilities across different materials, crystal structures, and manufacturing processes, enabling it to provide customized products based on customer requirements.
Revenue in the first half of this year exceeded NT$30 million, surpassing the company's total revenue for the previous year.
With capacity utilization expected to approach full capacity next year, TAISIC Materials plans to initiate capacity expansion.
In addition to its Pingzhen facility, the company has leased land in the Southern Taiwan Science Park, laying the groundwork for future factory construction and plans to double production capacity.
Furthermore, Ming-Hsun Hsieh noted that TAISIC Materials has partnered with Dingji Technology, a leading laser processing company, to jointly showcase breakthroughs in SiC laser thinning and low-stress processing technologies for the first time.
These technologies are also being supplied to a leading European power semiconductor manufacturer, overcoming major technical challenges associated with backside thinning in wafer manufacturing.
In addition to providing cost advantages and improving yield, these technologies effectively reduce the specific on-resistance and mechanical stress of SiC MOSFETs.
The integrated supply chain established by TAISIC Materials and Dingji Technology is expected to deliver synergies in both the overall cost and performance of power modules, further enhancing Taiwan's visibility in the global SiC industry.
TAISIC Materials and Dingji Technology are also collaborating on the development of thermal management technologies for single-crystal SiC optical engines.
Looking ahead, the two companies plan to jointly develop technologies for co-packaged optics (CPO), targeting applications with ultra-high power density.
Source: Liberty Times (自由時報)
Original Article:https://ec.ltn.com.tw/amp/article/breakingnews/5560312