Third-Generation Semiconductor: Silicon Carbide (SiC)

      Semi-insulating SiC Substrates

      • Semi-Insulating SiC Substrates | 4" / 6" / 8"

        Resistivity: High resistivity > 1 × 10⁶ Ω·cm
        Size: 4–8 inches
        Thickness: 500 μm wafer

        Features:
        Enhances the power-handling capability of RF devices, with excellent high-temperature performance, thermal conductivity, and electric-field breakdown strength. Enables up to 10× higher power density compared with silicon-based devices.

        Applications:
        High-frequency / high-power devices, next-generation 5G communications, and transportation applications.

        Specification Request: sales.taisicmaterials.com